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For the Inventor, By the Inventor

Chandler, AZ, United States of America

Darrell Glenn Hill

This inventor holds 46 USPTO granted patents and 10 published patent applications, primarily in Semiconductor Devices. Top assignees: Nxp USA, Inc., Freescale Semiconductor,inc., Motorola Corporation. Active years: 2002-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Darrell Glenn Hill. Retrieved from https://idiyas.com/inventor/darrell-glenn-hill

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 46 

% Patents Active = 93.5

Average Co-Inventor Count = 2.0

ph-index = 7

Forward Citations = 148(Granted Patents)


Location History:

  • Tempe, AZ (US) (2002 - 2017)
  • Chandler, AZ (US) (2015 - 2023)

Company Filing History:

goldMedal28 out of 2,846 
 
Nxp USA, Inc.
 patents
silverMedal13 out of 5,491 
 
Freescale Semiconductor,inc.
 patents
bronzeMedal5 out of 20,290 
 
Motorola Corporation
 patents

Years Active: 2002-2026

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Areas of Expertise:
Transistor
Semiconductor Device
Through Substrate Via
Power Amplifier
Field Plate
Defect Mitigation
Dielectric Spacers
Isolation Test Structure
Heterojunction Bipolar Transistor
ESD Protection
Integrated Circuit
Conductive Layer
46 patents (USPTO):Explore Patents
1. 12690252 - Transistor gate structure with insulating layer and method of fabrication therefor (2026-07-21),
2. 12477803 - Transistor with defect mitigation structures (2025-11-18),
3. 12464798 - Transistor with aligned field plate and method of fabrication therefor (2025-11-04),
4. 12369380 - Transistor with dielectric spacers and field plate and method of fabrication therefor (2025-07-22),
5. 12334416 - Through substrate via (TSV) validation structure for an integrated circuit and method to form the TSV validation structure (2025-06-17),
6. 12266713 - Transistor with dielectric spacers and method of fabrication therefor (2025-04-01),
7. 12211759 - Circuit die with isolation test structure (2025-01-28),
8. 11842996 - Transistor with odd-mode oscillation stabilization circuit (2023-12-12),
9. 11823978 - Through substrate via (TSV) validation structure for an integrated circuit and method to form the TSV validation structure (2023-11-21),
10. 11450616 - Using a backside mask layer for forming a unique die mark identifier pattern (2022-09-20),
11. 11444044 - Transistor die with output bondpad at the input side of the die, and power amplifiers including such dies (2022-09-13),
12. 11088661 - Power amplifier devices containing inverted power transistor dies and methods for the fabrication thereof (2021-08-10),
13. 10957790 - Semiconductor device with selectively etched surface passivation (2021-03-23),
14. 10879168 - Transistor with non-circular via connections in two orientations (2020-12-29),
15. 10825924 - Semiconductor device with selectively etched surface passivation (2020-11-03),

Title: Darrell Glenn Hill - Innovative Inventor from Chandler, AZ

Introduction: Darrell Glenn Hill is a prolific inventor based in Chandler, Arizona, known for his groundbreaking contributions to various industries through his innovative creations.

Latest Patents: Darrell Glenn Hill's latest patents include advancements in renewable energy technologies, smart home devices, and medical equipment, showcasing his diverse range of expertise and interests.

Career Highlights: With a career spanning over two decades, Darrell Glenn Hill has established himself as a leading figure in the world of innovation, holding numerous patents and receiving recognition for his impactful inventions.

Collaborations: Throughout his career, Darrell Glenn Hill has collaborated with top research institutions, leading companies, and talented individuals to bring his ideas to life and push the boundaries of what is possible in the realm of technology.

Conclusion: Darrell Glenn Hill's passion for innovation and his relentless drive to create solutions to complex problems have solidified his reputation as a visionary inventor, inspiring the next generation of innovators to think outside the box and pursue their ideas fearlessly.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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