Transistors with dielectric spacers and methods of fabrication thereof

Abstract

A transistor device and method of fabrication are provided, where the transistor device may include a semiconductor substrate, a first dielectric layer disposed on a surface of the semiconductor substrate, a second dielectric layer disposed directly on the first dielectric layer, a gate structure disposed directly on the surface of the semiconductor substrate, and a spacer structure. A first opening through the first dielectric layer and the second dielectric layer may correspond to a gate channel. Portions of the first dielectric layer and the second dielectric layer may be interposed directly between portions of the gate structure and the surface of the semiconductor substrate. The spacer structure may be disposed in the gate channel and interposed between the gate structure and the semiconductor substrate. The spacer structure may contact respective side surfaces of the first dielectric layer and the second dielectric layer that at least partially define the gate channel.