The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2026
Filed:
Dec. 29, 2021
Nxp Usa, Inc., Austin, TX (US);
Darrell Glenn Hill, Chandler, AZ (US);
NXP USA, INC., Austin, TX (US);
Abstract
A transistor device includes a semiconductor substrate and a gate structure formed at the upper surface of the substrate. The gate structure includes a metal gate electrode and a gate insulating layer overlying the metal gate electrode, where edges of the gate insulating layer correspond to edges of the metal gate electrode. The transistor device also includes a first dielectric layer formed over the gate structure, and a first interconnect metal layer formed over the first dielectric layer. A portion of the first interconnect metal layer forms a field plate proximate to the gate structure, and a portion of the gate insulating layer and a portion of the first dielectric layer are present between the gate electrode and the field plate.