The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2022
Filed:
Jul. 29, 2020
Nxp Usa, Inc., Austin, TX (US);
David Robert Currier, Mesa, AZ (US);
Darrell Glenn Hill, Chandler, AZ (US);
Fred Reece Clayton, Mesa, AZ (US);
Alan J. Magnus, Gilbert, AZ (US);
Warren Crapse, Mesa, AZ (US);
NXP USA, INC., Austin, TX (US);
Abstract
A method of making a semiconductor device is provided for depositing, patterning, and developing photoresist () on an underlying layer located on a backside of a wafer having a frontside on which an integrated circuit die are formed over a shared wafer semiconductor substrate and arranged in a grid, thereby forming a patterned photoresist mask with a unique set of one or more openings which are used to selectively etch the underlying layer to form, on each integrated circuit die, a unique die mark identifier pattern of etched openings in the underlying layer corresponding to the unique set of one or more openings in the patterned photoresist mask (), where the patterned photoresist mask is removed () from the backside of the wafer before singulating the wafer to form a plurality of integrated circuit devices () which each include a unique die marking.