The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2023
Filed:
Mar. 04, 2021
Applicant:
Nxp B.v., Eindhoven, NL;
Inventors:
Saumitra Raj Mehrotra, Scottsdale, AZ (US);
Kejun Xia, Chandler, AZ (US);
Assignee:
NXP B.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/866 (2006.01); H01L 21/265 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/866 (2013.01); H01L 21/26513 (2013.01); H01L 29/66106 (2013.01);
Abstract
A method for manufacturing a Zener diode includes implanting an N-type Buried Layer (NBL) with an N-type dopant in a first epitaxial layer, wherein the NBL comprises an NBL opening excluding the N-type dopant. A P-type Buried Layer (PBL) having a peak PBL doping concentration below the NBL is implanted. A second epitaxial layer is grown over the NBL. A P-type region (Plink) is implanted to couple to the PBL above the NBL opening, and to couple the Plink to an Anode electrode. An N-type region (Nlink) is implanted to couple the NBL to a Cathode electrode.