The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2020

Filed:

Nov. 30, 2018
Applicant:

Nxp Usa, Inc., Austin, TX (US);

Inventors:

Saumitra Raj Mehrotra, Scottsdale, AZ (US);

Bernhard Grote, Phoenix, AZ (US);

Ljubo Radic, Gilbert, AZ (US);

Assignee:

NXP USA, INC., Austin, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/40 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7825 (2013.01); H01L 29/0649 (2013.01); H01L 29/407 (2013.01); H01L 29/66704 (2013.01);
Abstract

Disclosed herein is a conductive structure that serves as both a control terminal and a field plate for a transistor. The transistor includes a channel region including a portion located in a vertical sidewall of semiconductor material that separates an upper level portion and a lower level portion of the semiconductor material. An extended drain region includes a portion located in the lower portion of the semiconductor material. The conductive structure is laterally adjacent to the vertical sidewall and includes a first vertical side and an opposite second vertical side with the first vertical side being closer to the vertical component sidewall. The first side is vertically closer to the lower level portion of the semiconductor material than the second vertical side.


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