The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2022
Filed:
Sep. 23, 2020
Applicant:
Nxp Usa, Inc., Austin, TX (US);
Inventor:
Saumitra Raj Mehrotra, Scottsdale, AZ (US);
Assignee:
NXP USA, INC., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7825 (2013.01); H01L 21/823468 (2013.01); H01L 29/4236 (2013.01); H01L 29/66553 (2013.01);
Abstract
A transistor includes a trench formed in a semiconductor substrate. A conductive spacer is formed in the trench and offset from a first sidewall of the trench. A dielectric material is formed in the trench and surrounds the conductive spacer. A drift region is formed in the semiconductor substrate adjacent to the first sidewall and a first portion of a second sidewall of the trench. A drain region is formed in the drift region adjacent to a second portion of the second sidewall. A first gate region overlaps a portion of the drift region and is formed separate from the conductive spacer.