The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2020
Filed:
Oct. 30, 2018
Applicant:
Nxp Usa, Inc., Austin, TX (US);
Inventors:
Saumitra Raj Mehrotra, Scottsdale, AZ (US);
Bernhard Grote, Phoenix, AZ (US);
Ljubo Radic, Gilbert, AZ (US);
Assignee:
NXP USA, INC., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 27/088 (2006.01); H01L 29/08 (2006.01); H01L 21/28 (2006.01); H01L 21/8234 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7809 (2013.01); H01L 21/28176 (2013.01); H01L 21/823425 (2013.01); H01L 21/823487 (2013.01); H01L 27/088 (2013.01); H01L 29/0882 (2013.01); H01L 29/407 (2013.01); H01L 29/41741 (2013.01); H01L 29/6656 (2013.01); H01L 29/66719 (2013.01); H01L 29/66734 (2013.01);
Abstract
A transistor device includes a channel region including a portion located in a vertical sidewall of semiconductor material and an extended drain region including a portion located in a lower portion of the semiconductor material. In one embodiment, a control terminal of the transistor device is formed by forming a conductive sidewall spacer structure adjacent to the sidewall and a field plate for the transistor device is formed by forming a second conductive sidewall spacer structure.