The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2020
Filed:
Oct. 26, 2018
Nxp Usa, Inc., Austin, TX (US);
Bernhard Grote, Phoenix, AZ (US);
Ljubo Radic, Gilbert, AZ (US);
Saumitra Raj Mehrotra, Scottsdale, AZ (US);
Tania Tricia-Marie Thomas, Austin, TX (US);
Mark Edward Gibson, Austin, TX (US);
NXP USA, INC., Austin, TX (US);
Abstract
A method of forming a transistor device where an extended drain region is formed by performing angled ion implantation of conductivity dopants of a first conductivity type into the sidewalls and bottom portion of a trench. The bottom portion of the trench is then implanted with dopants of a second conductivity type. Source and drain regions are formed on opposing sides of the trench including in upper portions of the trench sidewalls. A channel region is formed in a trench sidewall below the source region. The trench includes a control terminal structure. After formation of the transistor device, the net conductivity type of the bottom portion of the trench is of the first conductivity type.