Company Filing History:

22 out of 2,352

Mitsubishi Chemical Corporation

patents

6 out of 1,311

Japan Science and Technology Agency

patents

1 out of 2,250

Mitsubishi Gas Chemical Company, Inc.

patents

Years Active: 1996-2024

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29 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12107129 - Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device (2024-10-01),

2. 11664428 - Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device (2023-05-30),

3. 11038024 - Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device (2021-06-15),

4. 11031475 - Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device (2021-06-08),

5. 10655244 - GaN substrate, method for producing GaN substrate, method for producing GaN crystal, and method for manufacturing semiconductor device (2020-05-19),

6. 10570530 - Periodic table group 13 metal nitride crystals and method for manufacturing periodic table group 13 metal nitride crystals (2020-02-25),

7. 10475887 - Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device (2019-11-12),

8. 10066319 - GaN substrate, method for producing GaN substrate, method for producing GaN crystal, and method for manufacturing semiconductor device (2018-09-04),

9. 10023976 - Periodic table group 13 metal nitride crystals and method for manufacturing periodic table group 13 metal nitride crystals (2018-07-17),

10. 9840791 - Periodic table group 13 metal nitride crystals and method for manufacturing periodic table group 13 metal nitride crystals (2017-12-12),

11. 9506892 - Field-effect transistor, single-electron transistor and sensor using the same (2016-11-29),

12. 9502241 - Group III nitride crystal production method and group III nitride crystal (2016-11-22),

13. 8772099 - Method of use of a field-effect transistor, single-electron transistor and sensor (2014-07-08),

14. 8766326 - Field-effect transistor, single-electron transistor and sensor (2014-07-01),

15. 8502277 - Field-effect transistor, single-electron transistor and sensor using the same (2013-08-06),

Title: Satoru Nagao: Pioneering Inventor from Ushiku

Introduction: Satoru Nagao is a renowned inventor hailing from Ushiku, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Satoru Nagao holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: With a career spanning over two decades, Nagao has worked with leading tech companies in Japan, spearheading research and development projects that have led to significant advancements in various industries.

Collaborations: Throughout his career, Satoru Nagao has collaborated with top researchers, engineers, and scientists both locally and internationally, fostering a culture of innovation and knowledge sharing.

Conclusion: Satoru Nagao's dedication to pushing the boundaries of technology and his passion for creating solutions to complex problems have solidified his reputation as a visionary inventor in the global innovation landscape.

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3 patents (EPO):

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6 patents pending (EPO):

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