Mitsubishi Chemical Corporation

Japan Science and Technology Agency

Mitsubishi Gas Chemical Company, Inc.

Satoru Nagao

Kenji Fujito

Shuichi Kubo

Hirotaka Ikeda

Yutaka Mikawa

Hideo Fujisawa

Kazunori Kamada

Yusuke Tsukada

Toshinari Fujimori

Kenji Shimoyama

Kazuhiko Matsumoto

Atsuhiko Kojima

Tae Mochizuki

Hideki Gotoh

Hideki Goto

Hideyoshi Horie

Kazuhiro Nagaike

Masanori Katou

Yutaka Yamada

Yasuo Ifuku

Hiroshi Mitani

Kazumasa Kiyomi

Yuuki Enatsu

Nobuyuki Hosoi

Katsushi Fujii

Masayuki Tashiro

Tetsuharu Kajimoto

Horie Hideyoshi

Takashi Fukada

Yoshitaka Yamamoto

Hajime Matsumoto

Kunitada Suzaki

An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10Å or less is observed.

Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device

An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0&#xd7;10&#x212b; or less is observed.

A disc-like GaN substrate is a substrate produced by a tiling method and having an angel between the normal line and m-axis on the main surface of the substrate of 0 to 20&#xb0; inclusive and a diameter of 45 to 55 mm, to 4 or less. In a preferred embodiment, a disc-like GaN substrate has a first main surface and a second main surface that is opposite to the first main surface, and which has an angle between the normal line and m-axis on the first main surface of 0 to 20&#xb0; inclusive and a diameter of 45 mm or more. The disc-like GaN substrate comprises at least four crystalline regions each being exposed to both of the first main surface and the second main surface, wherein the four crystalline regions are arranged in line along the direction of the orthogonal projection of c-axis on the first main surface.

GaN substrate, method for producing GaN substrate, method for producing GaN crystal, and method for manufacturing semiconductor device

A periodic table Group 13 metal nitride crystals grown with a non-polar or semi-polar principal surface have numerous stacking faults. The purpose of the present invention is to provide a period table Group 13 metal nitride crystal wherein the occurrence of stacking faults of this kind are suppressed. The present invention achieves the foregoing by a periodic table Group 13 metal nitride crystal being characterized in that, in a Qx direction intensity profile that includes a maximum intensity and is derived from an isointensity contour plot obtained by x-ray reciprocal lattice mapping of (100) plane of the periodic table Group 13 metal nitride crystal, a Qx width at 1/300th of peak intensity is 6&#xd7;10rlu or less.

Periodic table group 13 metal nitride crystals and method for manufacturing periodic table group 13 metal nitride crystals

A sensor capable of detecting detection targets that are necessary to be detected with high sensitivity is provided. It comprises a field-effect transistorA having a substrate, a source electrodeand a drain electrodeprovided on said substrate, and a channelforming a current path between said source electrodeand said drain electrode

Field-effect transistor, single-electron transistor and sensor using the same

Provided is a high-quality Group III nitride crystal of excellent processability. A Group III nitride crystal is produced by forming a film is composed of an oxide, hydroxide and/or oxyhydroxide containing a Group III element by heat-treating a Group III nitride single crystal at 1000&#xb0; C. or above, and removing the film.

Group III nitride crystal production method and group III nitride crystal

A method of detecting a detection target using a sensor requires a sensor having a transistor selected from the group of field-effect transistors or single electron transistors. The transistor includes a substrate, a source electrode disposed on the substrate and a drain electrode disposed on the substrate, and a channel forming a current path between the source electrode and the drawing electrode; an interaction-sensing gate comprising a specific substance; and a voltage gate. The method includes (a) providing the detection target on the interaction-sensing gate; (b) setting the gate voltage in the voltage gate at a predetermined level; (c) selectively interacting the specific substance with the detection target; (d) when the detection target interacts with the specific substance, changing a gate voltage in the voltage gate to adjust a characteristic of the transistor; and (e) measuring a change in the characteristic of the transistor to determine a presence of the detection target.

Method of use of a field-effect transistor, single-electron transistor and sensor

A field-effect transistor or a single electron transistor is used as sensors for detecting a detection target such as a biological compound. A substrate has a first side and a second side, the second side being opposed to the first side. A source electrode is disposed on the first side of the substrate and a drain electrode disposed on the first side of the substrate, and a channel forms a current path between the source electrode and the drain electrode. An interaction-sensing gate is disposed on the second side of the substrate, the interaction-sensing gate having a specific substance that is capable of selectively interacting with the detection target. A gate for applying a gate voltage adjusts a characteristic of the transistor as the detection target changes the characteristic of the transistor when interacting with the specific substance.

Field-effect transistor, single-electron transistor and sensor

A sensor capable of detecting detection targets that are necessary to be detected with high sensitivity is provided. It comprises a field-effect transistorA having a substrate, a source electrodeand a drain electrodeprovided on said substrate, and a channelforming a current path between said source electrodeand said drain electrode wherein said field-effect transistorA comprises: an interaction-sensing gatefor immobilizing thereon a specific substancethat is capable of selectively interacting with the detection targets; and a gateapplied a voltage thereto so as to detect the interaction by the change of the characteristic of said field-effect transistorA.

Growing community of inventors

Ushiku, Japan

Satoru Nagao