The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2014
Filed:
Jul. 24, 2012
Kazuhiko Matsumoto, Ibaraki, JP;
Atsuhiko Kojima, Ibaraki, JP;
Satoru Nagao, Chiba, JP;
Masanori Katou, Kanagawa, JP;
Yutaka Yamada, Ibaraki, JP;
Kazuhiro Nagaike, Kanagawa, JP;
Yasuo Ifuku, Kanagawa, JP;
Hiroshi Mitani, Kanagawa, JP;
Kazuhiko Matsumoto, Ibaraki, JP;
Atsuhiko Kojima, Ibaraki, JP;
Satoru Nagao, Chiba, JP;
Masanori Katou, Kanagawa, JP;
Yutaka Yamada, Ibaraki, JP;
Kazuhiro Nagaike, Kanagawa, JP;
Yasuo Ifuku, Kanagawa, JP;
Hiroshi Mitani, Kanagawa, JP;
Japan Science and Technology Agency, Saitama, JP;
Abstract
A field-effect transistor or a single electron transistor is used as sensors for detecting a detection target such as a biological compound. A substrate has a first side and a second side, the second side being opposed to the first side. A source electrode is disposed on the first side of the substrate and a drain electrode disposed on the first side of the substrate, and a channel forms a current path between the source electrode and the drain electrode. An interaction-sensing gate is disposed on the second side of the substrate, the interaction-sensing gate having a specific substance that is capable of selectively interacting with the detection target. A gate for applying a gate voltage adjusts a characteristic of the transistor as the detection target changes the characteristic of the transistor when interacting with the specific substance.