The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2016
Filed:
Jun. 12, 2014
Applicant:
Japan Science and Technology Agency, Saitama, JP;
Inventors:
Kazuhiko Matsumoto, Ibaraki, JP;
Atsuhiko Kojima, Ibaraki, JP;
Satoru Nagao, Chiba, JP;
Masanori Katou, Kanagawa, JP;
Yutaka Yamada, Ibaraki, JP;
Kazuhiro Nagaike, Kanagawa, JP;
Yasuo Ifuku, Kanagawa, JP;
Hiroshi Mitani, Kanagawa, JP;
Assignee:
JAPAN SCIENCE AND TECHNOLOGY AGENCY, Saitama, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 27/414 (2006.01); B82Y 10/00 (2011.01); B82Y 30/00 (2011.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
G01N 27/4145 (2013.01); B82Y 10/00 (2013.01); B82Y 30/00 (2013.01); G01N 27/4146 (2013.01); H01L 29/068 (2013.01); H01L 29/42364 (2013.01); H01L 29/7613 (2013.01);
Abstract
A sensor capable of detecting detection targets that are necessary to be detected with high sensitivity is provided. It comprises a field-effect transistorA having a substrate, a source electrodeand a drain electrodeprovided on said substrate, and a channelforming a current path between said source electrodeand said drain electrode