The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2019
Filed:
Feb. 05, 2016
Mitsubishi Chemical Corporation, Chiyoda-ku, JP;
Satoru Nagao, Ushiku, JP;
Yusuke Tsukada, Ushiku, JP;
Kazunori Kamada, Ushiku, JP;
Shuichi Kubo, Ushiku, JP;
Hirotaka Ikeda, Ushiku, JP;
Kenji Fujito, Ushiku, JP;
Hideo Fujisawa, Ushiku, JP;
Yutaka Mikawa, Ushiku, JP;
Tae Mochizuki, Ushiku, JP;
Mitsubishi Chemical Corporation, Chiyoda-ku, JP;
Abstract
An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10Å or less is observed.