logo

For the Inventor, By the Inventor

Ushiku, Japan

Hideo Fujisawa

This inventor holds 30 USPTO granted patents and 2 published patent applications and 4 EPO patents, primarily in Gallium Nitride Technology. Top assignees: Mitsubishi Chemical Corporation, Fujisawa Company Limited. Active years: 1987-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hideo Fujisawa. Retrieved from https://idiyas.com/inventor/hideo-fujisawa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 30 

% Patents Active = 96.7

 

Average Co-Inventor Count = 4.3

ph-index = 4

Forward Citations = 48(Granted Patents)


Location History:

  • Ibaraki, JP (2015 - 2021)
  • Tokyo, JP (1987 - 2023)
  • Ushiku, JP (2013 - 2023)

Company Filing History:

goldMedal28 out of 2,427 
 
Mitsubishi Chemical Corporation
 patents
silverMedal2 out of 2 
 
Fujisawa Company Limited
 patents

Years Active: 1987-2026

Loading Chart...
Loading Chart...
Areas of Expertise:
GaN Substrate
Nitride Crystal
Semiconductor Device
C-plane GaN
Single Crystal
Crystal Growth
Self-standing GaN
Manufacturing Method
Conductive Substrate
Group-13 Metal
Nitride Semiconductor
30 patents (USPTO):Explore Patents
1. 12644201 - Method for producing nitride crystal and nitride crystal (2026-06-02),
2. 12107129 - Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device (2024-10-01),
3. 11810782 - Conductive C-plane GaN substrate (2023-11-07),
4. 11670687 - Gallium nitride substrate and manufacturing method of nitride semiconductor crystal (2023-06-06),
5. 11664428 - Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device (2023-05-30),
6. 11591715 - GaN single crystal and method for manufacturing GaN single crystal (2023-02-28),
7. 11404268 - Method for growing GaN crystal and c-plane GaN substrate (2022-08-02),
8. 11162190 - Method for producing nitride crystal and nitride crystal (2021-11-02),
9. 11038024 - Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device (2021-06-15),
10. 11031475 - Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device (2021-06-08),
11. 11001940 - GaN single crystal and method for manufacturing GaN single crystal (2021-05-11),
12. 10995421 - Crystal of nitride of group-13 metal on periodic table, and method for producing the same (2021-05-04),
13. 10903072 - Conductive C-plane GaN substrate (2021-01-26),
14. 10796904 - Conductive C-plane GaN substrate (2020-10-06),
15. 10734485 - Gallium nitride substrate and manufacturing method of nitride semiconductor crystal (2020-08-04),

Title: The Innovative Journey of Hideo Fujisawa

Introduction: Hideo Fujisawa, a pioneering inventor hailing from Ushiku, Japan, has made significant contributions to the world of technology through his groundbreaking innovations.

Latest Patents: Hideo Fujisawa's most recent patents include advancements in artificial intelligence algorithms for autonomous vehicles and cutting-edge medical devices for non-invasive diagnostics.

Career Highlights: With a career spanning over three decades, Fujisawa has worked with top research institutions and leading tech companies to develop state-of-the-art solutions in the fields of robotics, nanotechnology, and renewable energy.

Collaborations: Throughout his career, Hideo Fujisawa has collaborated with renowned scientists, engineers, and designers from around the globe, fostering a culture of innovation and creativity in all his projects.

Conclusion: Hideo Fujisawa's relentless pursuit of innovation and his passion for pushing the boundaries of technology continue to inspire the next generation of inventors and visionaries worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…