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Hideo Fujisawa

USPTO Granted Patents = 29 (Patent Applications = 3)

EPO Patents = 4 (Patent Applications = 2)

Average Co-Inventor Count = 4.3

ph-index = 4

Forward Citations = 48(Granted Patents)

Location History:

Ibaraki, JP (2015 - 2021)
Tokyo, JP (1987 - 2023)
Ushiku, JP (2013 - 2023)

Company Filing History:

27 out of 2,347

Mitsubishi Chemical Corporation

Fujisawa Company Limited

Years Active: 1987-2024

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29 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12107129 - Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device (2024-10-01),

2. 11810782 - Conductive C-plane GaN substrate (2023-11-07),

3. 11670687 - Gallium nitride substrate and manufacturing method of nitride semiconductor crystal (2023-06-06),

4. 11664428 - Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device (2023-05-30),

5. 11591715 - GaN single crystal and method for manufacturing GaN single crystal (2023-02-28),

6. 11404268 - Method for growing GaN crystal and c-plane GaN substrate (2022-08-02),

7. 11162190 - Method for producing nitride crystal and nitride crystal (2021-11-02),

8. 11038024 - Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device (2021-06-15),

9. 11031475 - Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device (2021-06-08),

10. 11001940 - GaN single crystal and method for manufacturing GaN single crystal (2021-05-11),

11. 10995421 - Crystal of nitride of group-13 metal on periodic table, and method for producing the same (2021-05-04),

12. 10903072 - Conductive C-plane GaN substrate (2021-01-26),

13. 10796904 - Conductive C-plane GaN substrate (2020-10-06),

14. 10734485 - Gallium nitride substrate and manufacturing method of nitride semiconductor crystal (2020-08-04),

15. 10720326 - Method for growing GaN crystal and C-plane GaN substrate (2020-07-21),

Title: The Innovative Journey of Hideo Fujisawa

Introduction: Hideo Fujisawa, a pioneering inventor hailing from Ushiku, Japan, has made significant contributions to the world of technology through his groundbreaking innovations.

Latest Patents: Hideo Fujisawa's most recent patents include advancements in artificial intelligence algorithms for autonomous vehicles and cutting-edge medical devices for non-invasive diagnostics.

Career Highlights: With a career spanning over three decades, Fujisawa has worked with top research institutions and leading tech companies to develop state-of-the-art solutions in the fields of robotics, nanotechnology, and renewable energy.

Collaborations: Throughout his career, Hideo Fujisawa has collaborated with renowned scientists, engineers, and designers from around the globe, fostering a culture of innovation and creativity in all his projects.

Conclusion: Hideo Fujisawa's relentless pursuit of innovation and his passion for pushing the boundaries of technology continue to inspire the next generation of inventors and visionaries worldwide.

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