logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11810782 B1

PDFFull Text
Date of Patent:
Nov. 07, 2023

Filed:

Dec. 09, 2020

Conductive c-plane gan substrate

Applicant:

Mitsubishi Chemical Corporation, Tokyo, JP;

Inventors:

Yutaka Mikawa, Tokyo, JP;

Hideo Fujisawa, Tokyo, JP;

Tae Mochizuki, Tokyo, JP;

Hideo Namita, Tokyo, JP;

Shinichiro Kawabata, Kawasaki, JP;

Assignee:

MITSUBISHI CHEMICAL CORPORATION, Tokyo, JP;

Attorney:

Element IP, PLC

Primary Examiner:

Alia Sabur

Int. Cl.
CPC ...
H01L 21/02 (2006.01); C30B 7/10 (2006.01); C30B 29/38 (2006.01); C30B 33/06 (2006.01); H01L 33/00 (2010.01); C30B 29/40 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02389 (2013.01); C30B 7/10 (2013.01); C30B 29/38 (2013.01); C30B 29/406 (2013.01); C30B 33/06 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02609 (2013.01); H01L 21/02639 (2013.01); H01L 21/02647 (2013.01); H01L 29/2003 (2013.01); H01L 33/0093 (2020.05); H01L 21/02433 (2013.01);
Abstract

A conductive C-plane GaN substrate has a resistivity of 2×10Ω·cm or less or an n-type carrier concentration of 1×10cmor more at room temperature. At least one virtual line segment with a length of 40 mm can be drawn at least on one main surface of the substrate. The line segment satisfies at least one of the following conditions (A1) and (B1): (A1) when an XRC of (004) reflection is measured at 1 mm intervals on the line segment, a maximum value of XRC-FWHMs across all measurement points is less than 30 arcsec; and (B1) when an XRC of the (004) reflection is measured at 1 mm intervals on the line segment, a difference between maximum and minimum values of XRC peak angles across all the measurement points is less than 0.2°.

Find Patent Forward Citations

Loading…