Ushiku, Japan

Yutaka Mikawa

This inventor holds 33 USPTO granted patents and 4 published patent applications and 4 EPO patents, primarily in Gallium Nitride Technology. Top assignees: Mitsubishi Chemical Corporation, The Japan Steel Works, Ltd., Tohoku University. Active years: 2013-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yutaka Mikawa. Retrieved from https://idiyas.com/inventor/yutaka-mikawa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 33 

% Patents Active = 100.0

 

Average Co-Inventor Count = 5.2

ph-index = 3

Forward Citations = 37(Granted Patents)


Location History:

  • Ibaraki, JP (2013 - 2021)
  • Ushiku, JP (2013 - 2023)
  • Tokyo, JP (2019 - 2024)

Company Filing History:


Years Active: 2013-2026

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Areas of Expertise:
Gallium Nitride Crystal
GaN Substrate
Nitride Crystal
Self-Standing GaN
C-Plane GaN Wafer
Bulk GaN Crystal
Semiconductor Device
GaN Single Crystal
Manufacturing Method
Conductive GaN Substrate
Production Vessel
Group 13 Element Nitride
33 patents (USPTO):Explore Patents

Title: Yutaka Mikawa: Innovator in GaN Technologies

Introduction

Yutaka Mikawa, based in Ushiku, Japan, is a distinguished inventor with a remarkable portfolio of 30 patents. His innovative contributions primarily focus on Gallium Nitride (GaN) technologies, which are pivotal for advancements in the semiconductor industry. With a career that highlights significant technological enhancements, Mikawa continues to push the boundaries of crystal quality and semiconductor device production.

Latest Patents

Mikawa’s recent patents include groundbreaking inventions such as a self-standing GaN substrate, GaN crystal, and methods for producing GaN single crystal and semiconductor devices. The innovations aim to provide nonpolar or semipolar GaN substrates with improved size and crystal quality. His self-standing GaN substrate boasts a specific angle requirement (0 to 20 degrees) that enhances its performance characteristics. Moreover, his bulk GaN crystal is designed to minimize the degree of curvature of the c-plane, ensuring high-quality semiconductor products.

Career Highlights

Throughout his career, Mikawa has contributed significantly to the field through his work at notable organizations, including Mitsubishi Chemical Corporation and Tohoku University. His time at these institutions enabled him to collaborate on pioneering research that has had lasting impacts on GaN technology.

Collaborations

Yutaka Mikawa has collaborated with prominent colleagues such as Hideo Fujisawa and Kazunori Kamada, helping to advance the understanding and applications of Gallium Nitride materials. Their combined expertise has led to innovations that refine production methods and enhance the performance of semiconductor devices.

Conclusion

Yutaka Mikawa's extensive work on GaN technologies underlines his role as a key figure in the semiconductor industry. With numerous patents that reflect his innovative spirit and technical expertise, he continues to influence the landscape of modern electronics through his commitment to excellence in research and development. His contributions not only serve the present but also pave the way for future advancements in semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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