The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2026
Filed:
Aug. 24, 2023
Mitsubishi Chemical Corporation, Tokyo, JP;
The Japan Steel Works, Ltd., Tokyo, JP;
Tohoku University, Sendai, JP;
Yutaka Mikawa, Tokyo, JP;
Hirotaka Ikeda, Tokyo, JP;
Quanxi Bao, Tokyo, JP;
Kouhei Kurimoto, Tokyo, JP;
Kohei Shima, Sendai, JP;
Kazunobu Kojima, Sendai, JP;
Toru Ishiguro, Sendai, JP;
Shigefusa Chichibu, Sendai, JP;
MITSUBISHI CHEMICAL CORPORATION;, Tokyo, JP;
THE JAPAN STEEL WORKS, LTD., Tokyo, JP;
Tohoku University, Sendai, JP;
Abstract
An object of the present invention is to provide a GaN crystal long in light emission lifetime by time-resolved photoluminescence measurement and provide high-quality GaN crystal and GaN substrate that have few specified crystal defects affecting the light emission lifetime. A gallium nitride crystal having a light emission lifetime by time-resolved photoluminescence measurement, of 5 ps or more and 200 ps or less, and satisfying at least one of the following requirement (i) and requirement (ii): (i) an FWHM in a 004 diffraction X-ray rocking curve is 50 arcsec or less at least one position of the crystal; and (ii) a dislocation density is 5×10cmor less.