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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11670687 B1

PDFFull Text
Date of Patent:
Jun. 06, 2023

Filed:

Jun. 19, 2020

Gallium nitride substrate and manufacturing method of nitride semiconductor crystal

Applicant:

Mitsubishi Chemical Corporation, Tokyo, JP;

Inventors:

Yusuke Tsukada, Ushiku, JP;

Shuichi Kubo, Ushiku, JP;

Kazunori Kamada, Ushiku, JP;

Hideo Fujisawa, Ushiku, JP;

Tatsuhiro Ohata, Kitakyushu, JP;

Hirotaka Ikeda, Ushiku, JP;

Hajime Matsumoto, Yokohama, JP;

Yutaka Mikawa, Ushiku, JP;

Assignee:

MITSUBISHI CHEMICAL CORPORATION, Tokyo, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Mohammed R Alam

Int. Cl.
CPC ...
H01L 29/20 (2006.01); C30B 25/00 (2006.01); C30B 25/02 (2006.01); C30B 29/40 (2006.01); H01L 21/02 (2006.01); H01L 33/00 (2010.01); H01L 29/32 (2006.01); C30B 25/20 (2006.01); H01L 33/32 (2010.01); H01L 33/12 (2010.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); C30B 25/00 (2013.01); C30B 25/02 (2013.01); C30B 25/20 (2013.01); C30B 29/406 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02389 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 21/02516 (2013.01); H01L 21/02576 (2013.01); H01L 21/02609 (2013.01); H01L 21/02639 (2013.01); H01L 29/32 (2013.01); H01L 33/007 (2013.01); H01L 33/32 (2013.01); H01L 33/12 (2013.01);
Abstract

A gallium nitride substrate comprising a first main surface and a second main surface opposite thereto, wherein the first main surface is a non-polar or semi-polar plane, a dislocation density measured by a room-temperature cathode luminescence method in the first main surface is 1×10cmor less, and an averaged dislocation density measured by a room-temperature cathode luminescence method in an optional square region sizing 250 μm×250 μm in the first main plan is 1×10cmor less.

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