Hajime Matsumoto

Title: Hajime Matsumoto: Innovator in Gallium Nitride Technology

Introduction

Hajime Matsumoto is a prominent inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of gallium nitride substrates. With a total of nine patents to his name, Matsumoto's work has had a substantial impact on the industry.

Latest Patents

One of Matsumoto's latest patents focuses on a gallium nitride substrate and the manufacturing method of nitride semiconductor crystals. This invention describes a gallium nitride substrate that features a first main surface and a second main surface opposite to it. The first main surface is characterized as a non-polar or semi-polar plane, with a dislocation density measured by a room-temperature cathode luminescence method being 1×10 cm or less. Additionally, the averaged dislocation density in a specified square region of the first main surface is also 1×10 cm or less. The primary goal of this invention is to provide a nonpolar or semipolar GaN substrate that allows for the epitaxial growth of nitride semiconductor crystals with a low stacking fault density.

Career Highlights

Matsumoto has worked with several notable companies throughout his career, including Mitsubishi Chemical Corporation and Matsushita Electric Industrial Co., Ltd. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Matsumoto has collaborated with several professionals in his field, including Yusuke Tsukada and Shuichi Kubo. These collaborations have likely enhanced his research and development efforts in gallium nitride technology.

Conclusion

Hajime Matsumoto is a distinguished inventor whose work in gallium nitride substrates has advanced semiconductor technology. His innovative patents and collaborations reflect his commitment to excellence in the field.