Mitsubishi Chemical Corporation

Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Hajime Matsumoto

Yutaka Mikawa

Hideo Fujisawa

Kazunori Kamada

Shuichi Kubo

Hirotaka Ikeda

Yusuke Tsukada

Tatsuhiro Ohata

Jyouji Wada

Takayuki Kimura

Satoru Nagao

Haruo Kogane

Kenji Fujito

Tetsurou Kajino

Takamasa Yokoyama

Kazuo Ota

Satoshi Soma

Kunitada Suzaki

Kazumasa Saito

A gallium nitride substrate comprising a first main surface and a second main surface opposite thereto, wherein the first main surface is a non-polar or semi-polar plane, a dislocation density measured by a room-temperature cathode luminescence method in the first main surface is 1&#xd7;10cmor less, and an averaged dislocation density measured by a room-temperature cathode luminescence method in an optional square region sizing 250 &#x3bc;m&#xd7;250 &#x3bc;m in the first main plan is 1&#xd7;10cmor less.

Gallium nitride substrate and manufacturing method of nitride semiconductor crystal

The main purpose of the present invention is to provide: a nonpolar or semipolar GaN substrate, in which a nitride semiconductor crystal having a low stacking fault density can be epitaxially grown on the main surface of the substrate, and a technique required for the production of the substrate. This invention provides: a method for manufacturing an M-plane GaN substrate comprising;

An omnidirectional camera system includes an omnidirectional camera that acquires an omnidirectional image by capturing using a fish-eye lens and an image processing device which displays the plurality of partial images which are cut out from the omnidirectional image side by side on one screen, in which the omnidirectional camera performs luminance adjustment with respect to the omnidirectional image, and the image processing device performs gradation adjustment processing in each partial image with respect to the plurality of partial images.

Omnidirectional camera system

The present invention relates to a phosphor represented by the Formula [1]: MSrCaAlSiN, wherein the phosphor includes phosphor particles in which single crystallites are three-dimensionally coupled to each other, the phosphor particles include a crystal grain boundary triple point, and [a total number of the crystal grain boundary triple points (A)]/[the number of the phosphor particles (B)] is 1.0 or less.

Phosphor, light-emitting device, image display device, and illumination device

The invention provides a nonpolar or semipolar GaN substrate, in which a nitride semiconductor crystal having a low stacking fault density can be epitaxially grown on the main surface of the substrate, and a method for manufacturing an M-plane GaN substrate by forming a mask pattern having a line-shaped opening parallel to an a-axis of a C-plane GaN substrate on an N-polar plane of the C-plane GaN substrate, growing a plane-shape GaN crystal of which thickness direction is an m-axis direction from the opening of the mask pattern by an ammonothermal method, and cutting out the M-plane GaN substrate from the plane-shape GaN crystal.

Provided is a high-quality Group III nitride crystal of excellent processability. A Group III nitride crystal is produced by forming a film is composed of an oxide, hydroxide and/or oxyhydroxide containing a Group III element by heat-treating a Group III nitride single crystal at 1000&#xb0; C. or above, and removing the film.

Group III nitride crystal production method and group III nitride crystal

A camera apparatus () includes: a CCD () serving as an imaging device; a cleaning member () for performing cleaning of the front face of the CCD (); and a cleaning controller () for controlling the movement of the cleaning member (). Cleaning control is carried out so that when the cleaning of the CCD () is started, the cleaning member () is moved to a cleaning position located in front of and in proximity to the CCD (), and when the cleaning of the CCD () is finished, the cleaning member () is moved to a retracted position retracted from the cleaning position. The camera apparatus itself is provided with the function of cleaning the imaging device, thereby enabling reduction in time and effort for a cleaning operation performed on the imaging device.

Camera device, cleaning control method, and cleaning control program

A cable-saving type CCTV system for transmitting a multiplexed video signal over a single coaxial cable connecting a camera site and a control site by frequency-modulating a bi-directional audio signal and producing a digital control signal and a digital alarm signal and multiplexing the resultant signals and an external synchronizing signal in a blanking period of the video signal.

CCTV system using multiplexed signals to reduce required cables

A picture image zoom apparatus is provided which includes an area specifying unit which designates a predetermined area of the displayed picture image for magnification. The specified area is displayed on the display unit (which displays the overall video signal from the camera circuit) in a manner so as to be distinguishable from the other areas of the picture image. The video signal is produced from the camera circuit and written in a picture image memory. As a result, the video signal is sequentially read from the image memory, and the portion of the video signal corresponding to the predetermined area of the image is displayed on the display unit in a magnified form.

Growing community of inventors

Yokohama, Japan

Hajime Matsumoto