The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2017
Filed:
Jun. 16, 2015
Mitsubishi Chemical Corporation, Tokyo, JP;
Yusuke Tsukada, Ushiku, JP;
Shuichi Kubo, Ushiku, JP;
Kazunori Kamada, Ushiku, JP;
Hideo Fujisawa, Ushiku, JP;
Tatsuhiro Ohata, Kitakyushu, JP;
Hirotaka Ikeda, Ushiku, JP;
Hajime Matsumoto, Yokohama, JP;
Yutaka Mikawa, Ushiku, JP;
MITSUBISHI CHEMICAL CORPORATION, Tokyo, JP;
Abstract
The invention provides a nonpolar or semipolar GaN substrate, in which a nitride semiconductor crystal having a low stacking fault density can be epitaxially grown on the main surface of the substrate, and a method for manufacturing an M-plane GaN substrate by forming a mask pattern having a line-shaped opening parallel to an a-axis of a C-plane GaN substrate on an N-polar plane of the C-plane GaN substrate, growing a plane-shape GaN crystal of which thickness direction is an m-axis direction from the opening of the mask pattern by an ammonothermal method, and cutting out the M-plane GaN substrate from the plane-shape GaN crystal.