Company Filing History:
Years Active: 2017-2023
Title: Tatsuhiro Ohata: Innovator in Gallium Nitride Technology
Introduction
Tatsuhiro Ohata is a prominent inventor based in Kitakyushu, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of gallium nitride substrates. With a total of 3 patents to his name, Ohata's work has been instrumental in advancing the capabilities of nitride semiconductor crystals.
Latest Patents
One of Tatsuhiro Ohata's latest patents focuses on a gallium nitride substrate and the manufacturing method of nitride semiconductor crystals. This invention describes a gallium nitride substrate that features a first main surface and a second main surface opposite to it. The first main surface is characterized as a non-polar or semi-polar plane, with a dislocation density measured by a room-temperature cathode luminescence method being ≤ 1×10 cm or less. Additionally, the averaged dislocation density in a specified square region of the first main surface is also ≤ 1×10 cm or less. The primary goal of this invention is to provide a nonpolar or semipolar GaN substrate that allows for the epitaxial growth of nitride semiconductor crystals with a low stacking fault density.
Career Highlights
Tatsuhiro Ohata is associated with Mitsubishi Chemical Corporation, where he continues to innovate in the field of semiconductor materials. His work has garnered attention for its potential applications in various electronic devices, enhancing performance and efficiency.
Collaborations
Ohata has collaborated with notable colleagues, including Yusuke Tsukada and Shuichi Kubo. Their combined expertise has contributed to the successful development of advanced semiconductor technologies.
Conclusion
Tatsuhiro Ohata's contributions to gallium nitride technology exemplify the impact of innovative thinking in the semiconductor industry. His patents and collaborations reflect a commitment to advancing technology for future applications.