Mitsubishi Chemical Corporation

Tatsuhiro Ohata

Yutaka Mikawa

Hideo Fujisawa

Kazunori Kamada

Shuichi Kubo

Hirotaka Ikeda

Yusuke Tsukada

Hajime Matsumoto

A gallium nitride substrate comprising a first main surface and a second main surface opposite thereto, wherein the first main surface is a non-polar or semi-polar plane, a dislocation density measured by a room-temperature cathode luminescence method in the first main surface is 1&#xd7;10cmor less, and an averaged dislocation density measured by a room-temperature cathode luminescence method in an optional square region sizing 250 &#x3bc;m&#xd7;250 &#x3bc;m in the first main plan is 1&#xd7;10cmor less.

Gallium nitride substrate and manufacturing method of nitride semiconductor crystal

The main purpose of the present invention is to provide: a nonpolar or semipolar GaN substrate, in which a nitride semiconductor crystal having a low stacking fault density can be epitaxially grown on the main surface of the substrate, and a technique required for the production of the substrate. This invention provides: a method for manufacturing an M-plane GaN substrate comprising;

The invention provides a nonpolar or semipolar GaN substrate, in which a nitride semiconductor crystal having a low stacking fault density can be epitaxially grown on the main surface of the substrate, and a method for manufacturing an M-plane GaN substrate by forming a mask pattern having a line-shaped opening parallel to an a-axis of a C-plane GaN substrate on an N-polar plane of the C-plane GaN substrate, growing a plane-shape GaN crystal of which thickness direction is an m-axis direction from the opening of the mask pattern by an ammonothermal method, and cutting out the M-plane GaN substrate from the plane-shape GaN crystal.

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Kitakyushu, Japan

Tatsuhiro Ohata