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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10734485 B1

PDFFull Text
Date of Patent:
Aug. 04, 2020

Filed:

Mar. 29, 2017

Gallium nitride substrate and manufacturing method of nitride semiconductor crystal

Applicant:

Mitsubishi Chemical Corporation, Tokyo, JP;

Inventors:

Yusuke Tsukada, Ushiku, JP;

Shuichi Kubo, Ushiku, JP;

Kazunori Kamada, Ushiku, JP;

Hideo Fujisawa, Ushiku, JP;

Tatsuhiro Ohata, Kitakyushu, JP;

Hirotaka Ikeda, Ushiku, JP;

Hajime Matsumoto, Yokohama, JP;

Yutaka Mikawa, Ushiku, JP;

Assignee:

MITSUBISHI CHEMICAL CORPORATION, Tokyo, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Mohammed R Alam

Int. Cl.
CPC ...
H01L 29/20 (2006.01); C30B 25/00 (2006.01); C30B 25/02 (2006.01); C30B 29/40 (2006.01); H01L 21/02 (2006.01); H01L 33/00 (2010.01); H01L 29/32 (2006.01); C30B 25/20 (2006.01); H01L 33/32 (2010.01); H01L 33/12 (2010.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); C30B 25/00 (2013.01); C30B 25/02 (2013.01); C30B 25/20 (2013.01); C30B 29/406 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02389 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 21/02516 (2013.01); H01L 21/02576 (2013.01); H01L 21/02609 (2013.01); H01L 21/02639 (2013.01); H01L 29/32 (2013.01); H01L 33/007 (2013.01); H01L 33/32 (2013.01); H01L 33/12 (2013.01);
Abstract

The main purpose of the present invention is to provide: a nonpolar or semipolar GaN substrate, in which a nitride semiconductor crystal having a low stacking fault density can be epitaxially grown on the main surface of the substrate, and a technique required for the production of the substrate. This invention provides: a method for manufacturing an M-plane GaN substrate comprising;

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Tsukada, Yusuke. (2020). Gallium nitride substrate and manufacturing method of nitride semiconductor crystal (U.S. Patent No. 10734485). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10734485

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