The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2020
Filed:
Mar. 29, 2017
Applicant:
Mitsubishi Chemical Corporation, Tokyo, JP;
Inventors:
Yusuke Tsukada, Ushiku, JP;
Shuichi Kubo, Ushiku, JP;
Kazunori Kamada, Ushiku, JP;
Hideo Fujisawa, Ushiku, JP;
Tatsuhiro Ohata, Kitakyushu, JP;
Hirotaka Ikeda, Ushiku, JP;
Hajime Matsumoto, Yokohama, JP;
Yutaka Mikawa, Ushiku, JP;
Assignee:
MITSUBISHI CHEMICAL CORPORATION, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); C30B 25/00 (2006.01); C30B 25/02 (2006.01); C30B 29/40 (2006.01); H01L 21/02 (2006.01); H01L 33/00 (2010.01); H01L 29/32 (2006.01); C30B 25/20 (2006.01); H01L 33/32 (2010.01); H01L 33/12 (2010.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); C30B 25/00 (2013.01); C30B 25/02 (2013.01); C30B 25/20 (2013.01); C30B 29/406 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02389 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 21/02516 (2013.01); H01L 21/02576 (2013.01); H01L 21/02609 (2013.01); H01L 21/02639 (2013.01); H01L 29/32 (2013.01); H01L 33/007 (2013.01); H01L 33/32 (2013.01); H01L 33/12 (2013.01);
Abstract
The main purpose of the present invention is to provide: a nonpolar or semipolar GaN substrate, in which a nitride semiconductor crystal having a low stacking fault density can be epitaxially grown on the main surface of the substrate, and a technique required for the production of the substrate. This invention provides: a method for manufacturing an M-plane GaN substrate comprising;