Ushiku, Japan

Kazunori Kamada

This inventor holds 19 USPTO granted patents and 1 published patent application and 3 EPO patents, primarily in Nitride Semiconductor Manufacturing. Top assignee: Mitsubishi Chemical Corporation. Active years: 2015-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kazunori Kamada. Retrieved from https://idiyas.com/inventor/kazunori-kamada

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 19 

% Patents Active = 94.7

 

Average Co-Inventor Count = 6.8

ph-index = 3

Forward Citations = 25(Granted Patents)


Location History:

  • Ushiku, JO (2016)
  • Ibaraki, JP (2015 - 2021)
  • Ushiku, JP (2015 - 2023)

Company Filing History:


Years Active: 2015-2026

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Areas of Expertise:
Nitride Crystal
GaN Substrate
Semiconductor Device
Crystal Production
Manufacturing Method
Self-Standing GaN
Gallium Nitride
Group-13 Metal
Single Crystal
Nitride Semiconductor
19 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Kazunori Kamada

Introduction

Kazunori Kamada, a prominent inventor based in Ushiku, Japan, has made significant contributions to the field of semiconductor technology. With a remarkable portfolio of 18 patents, his work primarily focuses on advancing gallium nitride (GaN) substrates, which are essential for high-performance electronic devices.

Latest Patents

Kamada's latest patents include groundbreaking innovations such as the self-standing GaN substrate, GaN crystal, a method for producing GaN single crystal, and a method for producing semiconductor devices. His inventions aim to provide a nonpolar or semipolar GaN substrate with improved size and crystal quality. Specifically, his self-standing GaN substrate maintains an angle between the normal of the principal surface and an m-axis of 0 degrees to 20 degrees. Furthermore, Kamada's gallium nitride substrate features a first main surface that is a non-polar or semi-polar plane, achieving a dislocation density of 1×10 cm or less, which is crucial for ensuring the efficiency of semiconductor devices.

Career Highlights

Kamada is affiliated with Mitsubishi Chemical Corporation, where he leverages his expertise to drive innovation in semiconductor technology. His commitment to improving GaN substrates has positioned him as a key player in the industry, contributing to advancements that enhance the performance and reliability of electronic devices.

Collaborations

Throughout his career, Kamada has worked alongside esteemed colleagues, including Hideo Fujisawa and Yutaka Mikawa. These collaborations have fostered an environment of creativity and innovation, leading to the development of cutting-edge technologies in their field.

Conclusion

Kazunori Kamada's extensive patent portfolio and collaborative efforts underscore his vital role in the field of semiconductor innovations. His work with gallium nitride substrates is paving the way for breakthroughs in electronic devices, making him a noteworthy inventor in contemporary technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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