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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10066319 B1

PDFFull Text
Date of Patent:
Sep. 04, 2018

Filed:

Jul. 14, 2016

Gan substrate, method for producing gan substrate, method for producing gan crystal, and method for manufacturing semiconductor device

Applicant:

Mitsubishi Chemical Corporation, Tokyo, JP;

Inventors:

Yusuke Tsukada, Ushiku, JP;

Satoru Nagao, Ushiku, JP;

Kazunori Kamada, Ushiku, JP;

Masayuki Tashiro, Ushiku, JP;

Kenji Fujito, Ushiku, JP;

Hideo Fujisawa, Ushiku, JP;

Yutaka Mikawa, Ushiku, JP;

Tetsuharu Kajimoto, Ushiku, JP;

Takashi Fukada, Ushiku, JP;

Assignee:

MITSUBISHI CHEMICAL CORPORATION, Tokyo, JP;

Attorney:

Leason Ellis LLP

Primary Examiner:

Robert M Kunemund

Int. Cl.
CPC ...
C30B 29/38 (2006.01); C30B 25/20 (2006.01); H01L 33/32 (2010.01); C30B 29/40 (2006.01); H01L 21/02 (2006.01); C30B 7/00 (2006.01); C30B 7/10 (2006.01); H01L 33/00 (2010.01); C30B 23/02 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
C30B 25/20 (2013.01); C30B 7/005 (2013.01); C30B 7/105 (2013.01); C30B 23/025 (2013.01); C30B 29/406 (2013.01); H01L 21/0254 (2013.01); H01L 21/02389 (2013.01); H01L 21/02433 (2013.01); H01L 21/02642 (2013.01); H01L 21/02647 (2013.01); H01L 33/0075 (2013.01); H01L 33/32 (2013.01); H01L 21/0262 (2013.01); H01L 29/2003 (2013.01);
Abstract

A disc-like GaN substrate is a substrate produced by a tiling method and having an angel between the normal line and m-axis on the main surface of the substrate of 0 to 20° inclusive and a diameter of 45 to 55 mm, to 4 or less. In a preferred embodiment, a disc-like GaN substrate has a first main surface and a second main surface that is opposite to the first main surface, and which has an angle between the normal line and m-axis on the first main surface of 0 to 20° inclusive and a diameter of 45 mm or more. The disc-like GaN substrate comprises at least four crystalline regions each being exposed to both of the first main surface and the second main surface, wherein the four crystalline regions are arranged in line along the direction of the orthogonal projection of c-axis on the first main surface.

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