Ushiku, Japan

Kenji Fujito

This inventor holds 20 USPTO granted patents and 2 published patent applications and 4 EPO patents, primarily in GaN Semiconductor Technology. Top assignees: Mitsubishi Chemical Corporation, University of California, Japan Science and Technology Agency. Active years: 2011-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kenji Fujito. Retrieved from https://idiyas.com/inventor/kenji-fujito

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 20 

% Patents Active = 90.0

 

Average Co-Inventor Count = 3.8

ph-index = 4

Forward Citations = 41(Granted Patents)


Location History:

  • Ushiki, JP (2016)
  • Ibaraki, JP (2011 - 2017)
  • Ushiku, JP (2015 - 2023)

Company Filing History:


Years Active: 2011-2024

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Areas of Expertise:
GaN Substrate
Group III-Nitride
Semiconductor Device
Single-Crystal Growth
Production Method
Semiconductor Light Emitting
Nitride Crystal
Supercritical Ammonia
20 patents (USPTO):Explore Patents

Title: Kenji Fujito: A Pioneer in GaN Technology

Introduction

Kenji Fujito, based in Ushiku, Japan, is a renowned inventor with a remarkable portfolio of 20 patents in the field of semiconductor technology. His innovative contributions, particularly in the development of Gallium Nitride (GaN) substrates, have significantly advanced the industry’s capabilities in producing high-performance semiconductor devices.

Latest Patents

Fujito's latest patents include groundbreaking technologies such as self-standing GaN substrates and methods for producing GaN single crystals. One notable patent addresses the objective of providing a nonpolar or semipolar GaN substrate with improved size and crystal quality. The specifications reveal that the self-standing GaN substrate features an angle between the normal of its principal surface and the m-axis of 0 degrees to 20 degrees. The size of the projected image in the c-axis direction must be 10 mm or more, and a low distortion section is characterized by an a-axis length variation within 10.0×10Å or less over a section length of at least 6 mm.

Career Highlights

Kenji Fujito has held significant positions at prominent companies, including Mitsubishi Chemical Corporation and the University of California. His expertise in material science and semiconductor technology has enabled him to make substantial contributions to the development of innovative solutions in GaN substrates.

Collaborations

Throughout his career, Fujito has collaborated with esteemed professionals like Satoru Nagao and Shuichi Kubo. These collaborations have played a critical role in advancing research and enhancing the practical applications of GaN technology in the semiconductor industry.

Conclusion

Kenji Fujito stands out as a pivotal figure in the field of semiconductor research and development. His numerous patents and collaborative endeavors highlight his commitment to advancing technology that supports the growth and efficiency of semiconductor devices. As technology continues to evolve, Fujito's innovations are expected to pave the way for further breakthroughs in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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