The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2015
Filed:
Jul. 01, 2013
Applicant:
Mitsubishi Chemical Corporation, Tokyo, JP;
Inventors:
Kenji Fujito, Ushiku, JP;
Kazumasa Kiyomi, Ushiku, JP;
Assignee:
MITSUBISHI CHEMICAL CORPORATION, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/18 (2010.01); H01L 31/18 (2006.01); C30B 25/20 (2006.01); C30B 29/40 (2006.01); H01L 21/02 (2006.01); H01L 29/04 (2006.01); H01L 29/20 (2006.01); H01L 33/16 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/18 (2013.01); C30B 25/20 (2013.01); C30B 29/403 (2013.01); H01L 21/0237 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02433 (2013.01); H01L 21/02609 (2013.01); H01L 21/02645 (2013.01); H01L 29/045 (2013.01); H01L 29/2003 (2013.01); H01L 31/1848 (2013.01); H01L 33/00 (2013.01); H01L 33/16 (2013.01); H01L 33/32 (2013.01);
Abstract
The method for producing a group III nitride semiconductor crystal comprises preparing a seed crystal having a non-polar plane followed by growing a group III nitride semiconductor from the non-polar plane in a vapor phase, wherein the growing includes growing the group III nitride semiconductor so as to extend in the +C-axis direction of the seed crystal. A group III-V nitride semiconductor crystal having high quality and a large-area non-polar plane can be obtained by the method.