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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9112096 B1

PDFFull Text
Date of Patent:
Aug. 18, 2015

Filed:

Jul. 01, 2013

Method for producing group-iii nitride semiconductor crystal, group-iii nitride semiconductor substrate, and semiconductor light emitting device

Applicant:

Mitsubishi Chemical Corporation, Tokyo, JP;

Inventors:

Kenji Fujito, Ushiku, JP;

Kazumasa Kiyomi, Ushiku, JP;

Assignee:

MITSUBISHI CHEMICAL CORPORATION, Tokyo, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

David Vu

Assistant Examiner:

Brandon Fox

Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/18 (2010.01); H01L 31/18 (2006.01); C30B 25/20 (2006.01); C30B 29/40 (2006.01); H01L 21/02 (2006.01); H01L 29/04 (2006.01); H01L 29/20 (2006.01); H01L 33/16 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/18 (2013.01); C30B 25/20 (2013.01); C30B 29/403 (2013.01); H01L 21/0237 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02433 (2013.01); H01L 21/02609 (2013.01); H01L 21/02645 (2013.01); H01L 29/045 (2013.01); H01L 29/2003 (2013.01); H01L 31/1848 (2013.01); H01L 33/00 (2013.01); H01L 33/16 (2013.01); H01L 33/32 (2013.01);
Abstract

The method for producing a group III nitride semiconductor crystal comprises preparing a seed crystal having a non-polar plane followed by growing a group III nitride semiconductor from the non-polar plane in a vapor phase, wherein the growing includes growing the group III nitride semiconductor so as to extend in the +C-axis direction of the seed crystal. A group III-V nitride semiconductor crystal having high quality and a large-area non-polar plane can be obtained by the method.

Find Patent Forward Citations

Fujito, Kenji. (2015). Method for producing group-iii nitride semiconductor crystal, group-iii nitride semiconductor substrate, and semiconductor light emitting device (U.S. Patent No. 9112096). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9112096

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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