The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 12, 2017

Filed:

Sep. 30, 2014
Applicant:

Mitsubishi Chemical Corporation, Chiyoda-ku, JP;

Inventors:

Yuuki Enatsu, Ushiku, JP;

Satoru Nagao, Ushiku, JP;

Shuichi Kubo, Ushiku, JP;

Hirotaka Ikeda, Ushiku, JP;

Kenji Fujito, Ushiku, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/40 (2006.01); C30B 25/02 (2006.01); H01L 21/02 (2006.01); C30B 25/14 (2006.01); C30B 25/20 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
C30B 29/406 (2013.01); C30B 25/02 (2013.01); C30B 25/14 (2013.01); C30B 25/20 (2013.01); C30B 29/403 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02389 (2013.01); H01L 21/02433 (2013.01); H01L 21/02634 (2013.01); H01L 29/2003 (2013.01);
Abstract

A periodic table Group 13 metal nitride crystals grown with a non-polar or semi-polar principal surface have numerous stacking faults. The purpose of the present invention is to provide a period table Group 13 metal nitride crystal wherein the occurrence of stacking faults of this kind are suppressed. The present invention achieves the foregoing by a periodic table Group 13 metal nitride crystal being characterized in that, in a Qx direction intensity profile that includes a maximum intensity and is derived from an isointensity contour plot obtained by x-ray reciprocal lattice mapping of (100) plane of the periodic table Group 13 metal nitride crystal, a Qx width at 1/300th of peak intensity is 6×10rlu or less.


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