The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2016
Filed:
Oct. 15, 2013
Applicant:
Mitsubishi Chemical Corporation, Chiyoda-ku, JP;
Inventors:
Hajime Matsumoto, Inashiki-gun, JP;
Kunitada Suzaki, Chuo-ku, JP;
Kenji Fujito, Ushiku, JP;
Satoru Nagao, Ushiku, JP;
Assignee:
MITSUSBISHI CHEMICAL CORPORATION, Chiyoda-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 21/02 (2006.01); C30B 33/02 (2006.01); C30B 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0254 (2013.01); C30B 29/406 (2013.01); C30B 33/02 (2013.01); H01L 29/2003 (2013.01);
Abstract
Provided is a high-quality Group III nitride crystal of excellent processability. A Group III nitride crystal is produced by forming a film is composed of an oxide, hydroxide and/or oxyhydroxide containing a Group III element by heat-treating a Group III nitride single crystal at 1000° C. or above, and removing the film.