Ushiku, Japan

Masayuki Tashiro


Average Co-Inventor Count = 4.5

ph-index = 1

Forward Citations = 8(Granted Patents)


Location History:

  • Ushiku, JP (2018 - 2020)
  • Tokyo, JP (2022)

Company Filing History:


Years Active: 2018-2022

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4 patents (USPTO):Explore Patents

Title: Masayuki Tashiro: Innovator in GaN Technology

Introduction

Masayuki Tashiro is a prominent inventor based in Ushiku, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of Gallium Nitride (GaN) materials. With a total of 4 patents to his name, Tashiro's work has advanced the capabilities of GaN substrates and their applications in various electronic devices.

Latest Patents

Tashiro's latest patents include innovative methods for producing GaN crystals and substrates. One notable patent describes a method for producing a non-polar or semi-polar GaN wafer. This method involves planarizing the front surfaces of multiple tiling GaN seeds arranged closely on a flat surface. An aggregated seed is then formed, allowing for the epitaxial growth of a bulk GaN crystal using the HVPE method. Another patent focuses on a disc-like GaN substrate produced by a tiling method, which features specific angles and diameters to enhance its performance in semiconductor devices.

Career Highlights

Masayuki Tashiro is currently employed at Mitsubishi Chemical Corporation, where he continues to push the boundaries of GaN technology. His work has been instrumental in developing high-quality substrates that are essential for modern electronic applications. Tashiro's expertise in this field has positioned him as a key figure in semiconductor research and development.

Collaborations

Throughout his career, Tashiro has collaborated with notable colleagues, including Yusuke Tsukada and Tetsuharu Kajimoto. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas in the semiconductor industry.

Conclusion

Masayuki Tashiro's contributions to GaN technology have made a significant impact on the semiconductor field. His innovative patents and collaborations highlight his dedication to advancing electronic materials and devices. Tashiro's work continues to inspire future developments in this critical area of technology.

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