The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2020
Filed:
Jun. 16, 2017
Mitsubishi Chemical Corporation, Tokyo, JP;
MITSUBISHI CHEMICAL CORPORATION, Tokyo, JP;
Abstract
A disk-shaped GaN substrate has a diameter of 2 inches or more has a front surface tilted with a tilt angle of 45° or more and 135° or less relative to the (0001) plane in a tilt direction within a range of ±5° around the <10-10> direction, and a back surface which is a main surface opposite to the front surface. The GaN substrate has a first point positioned in a direction perpendicular to the c-axis when viewed from the center thereof, on the side surface thereof. A single diffraction peak appears in an X-ray diffraction pattern obtained by θ scan in which an X-ray (CuKα: wavelength: 0.1542 nm) is incident to the first point and the incident angle θ of the incident X-ray is varied while the 2θ angle of the diffracted X-ray is fixed to twice the Bragg angle of 28.99° of the {11-20} plane.