The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2022
Filed:
Sep. 26, 2019
Applicant:
Mitsubishi Chemical Corporation, Tokyo, JP;
Inventors:
Assignee:
MITSUBISHI CHEMICAL CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/40 (2006.01); H01L 21/02 (2006.01); C30B 7/10 (2006.01); C30B 25/18 (2006.01); C30B 33/00 (2006.01); H01L 29/04 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
C30B 29/406 (2013.01); C30B 7/105 (2013.01); C30B 25/18 (2013.01); C30B 33/00 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02389 (2013.01); H01L 21/02433 (2013.01); H01L 21/02609 (2013.01); H01L 21/02639 (2013.01); H01L 29/045 (2013.01); H01L 29/2003 (2013.01);
Abstract
A method for producing a GaN crystal is provided. In the method, front surfaces of a plurality of tiling GaN seeds closely arranged side by side on a flat surface of a plate are planarized. An aggregated seed is formed by arranging the tiling GaN seeds closely side by side on a susceptor of an HVPE apparatus in the same arrangement as when fixed on the plate, with the front planarized surfaces facing upward. A bulk GaN crystal is grown epitaxially on the aggregated seed by an HVPE method.