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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11162190 B1

PDFFull Text
Date of Patent:
Nov. 02, 2021

Filed:

Oct. 28, 2019

Method for producing nitride crystal and nitride crystal

Applicant:

Mitsubishi Chemical Corporation, Chiyoda-ku, JP;

Inventors:

Yutaka Mikawa, Ushiku, JP;

Hideo Fujisawa, Ushiku, JP;

Kazunori Kamada, Ushiku, JP;

Hirobumi Nagaoka, Ushiku, JP;

Shinichiro Kawabata, Ushiku, JP;

Yuji Kagamitani, Ushiku, JP;

Assignee:

MITSUBISHI CHEMICAL CORPORATION, Chiyoda-ku, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Guinever S Gregorio

Int. Cl.
CPC ...
C30B 29/40 (2006.01); C30B 7/10 (2006.01); C01B 21/06 (2006.01); H01L 21/02 (2006.01); H01L 29/20 (2006.01); H01L 29/207 (2006.01); H01L 29/36 (2006.01); H01L 33/00 (2010.01); H01L 33/02 (2010.01); H01L 33/32 (2010.01); H01S 5/30 (2006.01); H01S 5/323 (2006.01);
U.S. Cl.
CPC ...
C30B 29/406 (2013.01); C01B 21/0632 (2013.01); C30B 7/105 (2013.01); C30B 29/403 (2013.01); H01L 21/0254 (2013.01); H01L 21/02389 (2013.01); H01L 21/02634 (2013.01); H01L 29/2003 (2013.01); H01L 29/207 (2013.01); H01L 29/365 (2013.01); H01L 33/0075 (2013.01); H01L 33/025 (2013.01); H01L 33/32 (2013.01); H01L 33/325 (2013.01); H01S 5/3086 (2013.01); H01S 5/32341 (2013.01); C01P 2004/50 (2013.01); C01P 2006/40 (2013.01); C01P 2006/90 (2013.01); H01S 2304/00 (2013.01); Y02P 20/54 (2015.11); Y10T 428/2982 (2015.01);
Abstract

A high-quality nitride crystal can be produced efficiently by charging a nitride crystal starting material that contains tertiary particles having a maximum diameter of from 1 to 120 mm and formed through aggregation of secondary particles having a maximum diameter of from 100 to 1000 μm, in the starting material charging region of a reactor, followed by crystal growth in the presence of a solvent in a supercritical state and/or a subcritical state in the reactor, wherein the nitride crystal starting material is charged in the starting material charging region in a bulk density of from 0.7 to 4.5 g/cmfor the intended crystal growth.

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