logo

For the Inventor, By the Inventor

Ushiku, Japan

Hirobumi Nagaoka

This inventor holds 7 USPTO granted patents and 2 published patent applications and 1 EPO patent. Top assignees: Mitsubishi Chemical Corporation, Tohoku University. Active years: 2010-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hirobumi Nagaoka. Retrieved from https://idiyas.com/inventor/hirobumi-nagaoka

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 7 

% Patents Active = 71.4

 

Average Co-Inventor Count = 5.4

ph-index = 3

Forward Citations = 40(Granted Patents)


Location History:

  • Ibaraki-ken, JP (2010)
  • Ibaraki, JP (2012)
  • Ushiku, JP (2015 - 2021)

Company Filing History:

goldMedal7 out of 2,433 
 
Mitsubishi Chemical Corporation
 patents
silverMedal1 out of 1,058 
 
Tohoku University
 patents
where one patent can have more than one assignee

Years Active: 2010-2026

Loading Chart...
Loading Chart...
7 patents (USPTO):Explore Patents
1. 12644201 - Method for producing nitride crystal and nitride crystal (2026-06-02),
2. 11162190 - Method for producing nitride crystal and nitride crystal (2021-11-02),
3. 10526726 - Method for producing nitride crystal and nitride crystal (2020-01-07),
4. 9518337 - Method for producing nitride crystal and nitride crystal (2016-12-13),
5. 9096945 - Method for producing nitride crystal and nitride crystal (2015-08-04),
6. 8142566 - Method for producing Ga-containing nitride semiconductor single crystal of BxAlyGazIn1-x-y-zNsPtAs1-s-t (0<=x<=1, 0<=y<1, 0<z<=1, 0<s<=1 and 0<=t<1) on a substrate (2012-03-27),
7. 7794541 - Gallium nitride-based material and method of manufacturing the same (2010-09-14),

Title: Hirobumi Nagaoka: Innovator in Nitride Crystal Production

Introduction

Hirobumi Nagaoka is a prominent inventor based in Ushiku, Japan. He has made significant contributions to the field of materials science, particularly in the production of nitride crystals. With a total of 7 patents to his name, Nagaoka's work has paved the way for advancements in various applications.

Latest Patents

One of Nagaoka's latest patents is a method for producing nitride crystals. This innovative technique allows for the efficient production of high-quality nitride crystals by charging a nitride crystal starting material that contains tertiary particles. These particles have a maximum diameter ranging from 1 to 120 mm and are formed through the aggregation of secondary particles with a maximum diameter of 100 to 1000 micrometers. The process involves crystal growth in the presence of a solvent in a supercritical and/or subcritical state within a reactor. The nitride crystal starting material is charged in the starting material charging region with a bulk density of 0.7 to 4.5 g/cm³ for optimal crystal growth.

Career Highlights

Throughout his career, Hirobumi Nagaoka has worked with notable organizations, including Mitsubishi Chemical Corporation and Tohoku University. His experience in these institutions has contributed to his expertise in the field of nitride crystal production.

Collaborations

Nagaoka has collaborated with esteemed colleagues such as Yutaka Mikawa and Hideo Fujisawa. These partnerships have further enhanced his research and development efforts in the field.

Conclusion

Hirobumi Nagaoka's innovative work in nitride crystal production showcases his dedication to advancing materials science. His contributions through patents and collaborations continue to influence the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…