The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2010
Filed:
Mar. 08, 2007
Hiroyuki Shibata, Miyagi-ken, JP;
Yoshio Waseda, Miyagi-ken, JP;
Kenji Shimoyama, Ibaraki-ken, JP;
Kazumasa Kiyomi, Ibaraki-ken, JP;
Hirobumi Nagaoka, Ibaraki-ken, JP;
Hiroyuki Shibata, Miyagi-ken, JP;
Yoshio Waseda, Miyagi-ken, JP;
Kenji Shimoyama, Ibaraki-ken, JP;
Kazumasa Kiyomi, Ibaraki-ken, JP;
Hirobumi Nagaoka, Ibaraki-ken, JP;
Tohoku University, Sendai-shi, JP;
Mitsubishi Chemical Corporation, Tokyo, JP;
Abstract
Disclosed is a method of manufacturing a GaN-based material having high thermal conductivity. A gallium nitride-based material is grown by HVPE (Hydride Vapor Phase Epitaxial Growth) by supplying a carrier gas (G) containing Hgas, GaCl gas (G), and NHgas (G) to a reaction chamber (), and setting the growth temperature at 900 (° C.) (inclusive) to 1,200 (° C.) (inclusive), the growth pressure at 8.08×10(Pa) (inclusive) to 1.21×10(Pa) (inclusive), the partial pressure of the GaCl gas (G) at 1.0×10(Pa) (inclusive) to 1.0×10(Pa) (inclusive), and the partial pressure of the NHgas (G) at 9.1×10(Pa) (inclusive) to 2.0×10(Pa) (inclusive).