The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2012
Filed:
Aug. 05, 2005
Kazumasa Kiyomi, Ibaraki, JP;
Hirobumi Nagaoka, Ibaraki, JP;
Hirotaka Oota, Ibaraki, JP;
Isao Fujimura, Ibaraki, JP;
Kazumasa Kiyomi, Ibaraki, JP;
Hirobumi Nagaoka, Ibaraki, JP;
Hirotaka Oota, Ibaraki, JP;
Isao Fujimura, Ibaraki, JP;
Mitsubishi Chemical Corporation, Tokyo, JP;
Abstract
A Ga-containing nitride semiconductor single crystal characterized in that (a) the maximum reflectance measured by irradiating the Ga-containing nitride semiconductor single crystal with light at a wavelength of 450 nm is 20% or less and the difference between the maximum reflectance and the minimum reflectance is within 10%, (b) the ratio of maximum value to minimum value (maximum value/minimum value) of the dislocation density measured by a cathode luminescence method is 10 or less, and/or (c) the lifetime measured by a time-resolved photoluminescence method is 95 ps or more.