Location History:
- Seto, JP (2003 - 2013)
- Minato-Ku, JP (2014)
- Ushiku, JP (2015 - 2021)
- Tokyo, JP (2013 - 2023)
- Kawasaki, JP (2020 - 2023)
Company Filing History:
12 out of 2,352 
11 out of 52,766 
3 out of 21 
Years Active: 2003-2023
Title: **Shinichiro Kawabata: A Pioneer in GaN Technology**
Introduction
Shinichiro Kawabata, based in Tokyo, Japan, is an esteemed inventor recognized for his significant contributions to the field of gallium nitride (GaN) technology. With a remarkable portfolio of 23 patents, Kawabata has been instrumental in advancing the capabilities and applications of GaN substrates and single crystals.
Latest Patents
Kawabata’s latest patents include groundbreaking inventions that further the understanding and utilization of conductive C-plane GaN substrates. One of his notable patents describes a conductive C-plane GaN substrate that boasts a resistivity of 2×10^Ω·cm or less and an n-type carrier concentration of 1×10^cm or more at room temperature. This substrate features a virtual line segment of at least 40 mm on one main surface, fulfilling specific criteria for X-ray rocking curve (XRC) measurements. Another significant patent involves a method for manufacturing GaN single crystals, delineating a structure where the gallium polar surface meets specific area requirements, ensuring pit-free zones occupy 80% or more of specified sub-areas. These innovations showcase Kawabata’s adeptness at tackling complex challenges in semiconductor materials.
Career Highlights
Kawabata has had an illustrious career, with notable tenures at leading companies such as Mitsubishi Chemical Corporation and Toshiba Corporation. His work at these institutions has allowed him to pioneer advancements in GaN technology, establishing a strong foundation for ongoing research and development in the semiconductor industry.
Collaborations
Throughout his career, Kawabata has collaborated with esteemed colleagues, including Yutaka Mikawa and Hideo Fujisawa. Their combined expertise has contributed to the success of numerous research projects, solidifying their impact in the field of materials science and engineering.
Conclusion
Shinichiro Kawabata stands out as a significant figure in the realm of GaN research. With a robust portfolio of patents and a track record of meaningful collaborations and innovations, his work continues to influence the future of semiconductor technologies. As the demand for advanced materials grows, Kawabata’s contributions will undoubtedly remain influential in shaping the industry.