Mitsubishi Chemical Corporation

Kabushiki Kaisha Toshiba

Toshiba Ha Products Co., Ltd.

Toshiba Home Appliances Corporation

Toshiba Consumer Electronics Holdings Corporation

Toshiba Consumer Marketing Corporation

Toshiba Lifestyle Products & Services Corporation

Shinichiro Kawabata

Yutaka Mikawa

Hideo Fujisawa

Tae Mochizuki

Hideo Namita

Kazunori Kamada

Yuji Kagamitani

Kiyomi Sasano

Fumitaka Yamazaki

Hirobumi Nagaoka

Masumi Ito

Hisao Tatsumi

Hiroshi Nishimura

Koji Hisano

Yoshinori Kaneda

Shuji Hashiba

Takashi Nishimura

Koji Kashima

Kazunobu Nagai

Tsuyoshi Hosoito

Hirokazu Izawa

Yoji Okazaki

Michiaki Ito

Toshimasa Tanaka

Satoru Nishiwaki

Masatsugu Wada

Takeyuki Yabuuchi

Futoshi Isono

Tatsuya Ooyabu

A conductive C-plane GaN substrate has a resistivity of 2&#xd7;10&#x3a9;&#xb7;cm or less or an n-type carrier concentration of 1&#xd7;10cmor more at room temperature. At least one virtual line segment with a length of 40 mm can be drawn at least on one main surface of the substrate. The line segment satisfies at least one of the following conditions (A1) and (B1): (A1) when an XRC of (004) reflection is measured at 1 mm intervals on the line segment, a maximum value of XRC-FWHMs across all measurement points is less than 30 arcsec; and (B1) when an XRC of the (004) reflection is measured at 1 mm intervals on the line segment, a difference between maximum and minimum values of XRC peak angles across all the measurement points is less than 0.2&#xb0;.

Conductive C-plane GaN substrate

A GaN single crystal having a gallium polar surface which is a main surface on one side and a nitrogen polar surface which is a main surface on the opposite side, wherein on the gallium polar surface is found at least one square area, an outer periphery of which is constituted by four sides of 2 mm or more in length, and, when the at least one square area is divided into a plurality of sub-areas each of which is a 100 &#x3bc;m&#xd7;100 &#x3bc;m square, pit-free areas account for 80% or more of the plurality of sub-areas.

GaN single crystal and method for manufacturing GaN single crystal

A method for growing a GaN crystal suitable as a material of GaN substrates including C-plane GaN substrates includes: a first step of preparing a GaN seed having a nitrogen polar surface; a second step of arranging a pattern mask on the nitrogen polar surface of the GaN seed, the pattern mask being provided with a periodical opening pattern comprising linear openings and including intersections, the pattern mask being arranged such that longitudinal directions of at least part of the linear openings are within &#xb1;3&#xb0; from a direction of an intersection line between the nitrogen polar surface and an M-plane; and a third step of ammonothermally growing a GaN crystal through the pattern mask such that a gap is formed between the GaN crystal and the pattern mask.

Method for growing GaN crystal and c-plane GaN substrate

A high-quality nitride crystal can be produced efficiently by charging a nitride crystal starting material that contains tertiary particles having a maximum diameter of from 1 to 120 mm and formed through aggregation of secondary particles having a maximum diameter of from 100 to 1000 &#x3bc;m, in the starting material charging region of a reactor, followed by crystal growth in the presence of a solvent in a supercritical state and/or a subcritical state in the reactor, wherein the nitride crystal starting material is charged in the starting material charging region in a bulk density of from 0.7 to 4.5 g/cmfor the intended crystal growth.

Method for producing nitride crystal and nitride crystal

A new GaN single crystal is provided. A GaN single crystal according to the present embodiment comprises a gallium polar surface which is a main surface on one side and a nitrogen polar surface which is a main surface on the opposite side, wherein on the gallium polar surface is found at least one square area, an outer periphery of which is constituted by four sides each with a length of 2 mm or more, and, when the at least one square are is divided into a plurality of sub-areas each of which is a square of 100 &#x3bc;m&#xd7;100 &#x3bc;m, pit-free areas account for 80% or more of the sub-areas.

Method for growing GaN crystal and C-plane GaN substrate

A new GaN single crystal is provided. A GaN single crystal according to the present embodiment comprises a gallium polar surface which is a main surface on one side and a nitrogen polar surface which is a main surface on the opposite side,

A washing machine includes a vibration damping device located in an outer casing for damping vibration of a tub using a cylinder enclosing an operating fluid including a functional fluid such as a magnetic viscous fluid changing a viscosity when an electrical energy is applied to the fluid. The vibration damping device includes the cylinder, a shaft inserted into the cylinder, a coil disposed in the cylinder, two yokes disposed between the cylinder and the shaft so as to be located at both axial sides of the coil respectively, the yokes forming a magnetic circuit together with the shaft and cylinder, a sealing member disposed axially outside one of the yokes in the cylinder to seal the operating fluid, and two bearings located axially outside the respective yokes in the cylinder to support the shaft so that the shaft is axially reciprocable.

Washing machine and drying machine

A washing and dehydrating machine includes a circulating passage communicating between interior and exterior of a water tub, warm air generating unit rendering air in the passage warm, an overflow outlet located in the water tub surface, so that water flows through the overflow outlet when a water level in the water tub is increased to or above a level, a drain conduit introduced outside the machine via a drain valve, through which water in the water tub is discharged, an overflow conduit having a lower end connected to the drain valve and communicating with the overflow outlet, and air stopping unit located in the overflow conduit and including a trap cutting off air flow and a water supply unit supplying water to the trap, allowing water to pass through and stopping air flow. The overflow conduit is introduced outside the machine via the air stopping unit.

Washing and drying machine

A damper obtaining damping force by the frictional resistance imparted by the viscosity of the magnetic viscous fluid is disclosed. The damper is provided with a seal not only on one (lower side) of the axial outer sides of the yoke but also on the other (upper side) of the axial outer sides of the yoke to trap the magnetic viscous fluid within the magnetic viscous fluid filling portion at both axial outer sides of magnetic viscous fluid filling portion. Because the leakage of the magnetic viscous fluid can be prevented, no air is introduced into the magnetic viscous fluid filling portion, to allow the density of the magnetic viscous fluid within magnetic viscous fluid filling portion to be maintained at a favorable level and prevent degradation of damping force.

Damper, washing machine, and washer/dryer

Growing community of inventors

Tokyo, Japan

Shinichiro Kawabata