The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2019
Filed:
Jul. 28, 2017
Applicant:
Mitsubishi Chemical Corporation, Tokyo, JP;
Inventors:
Hideo Fujisawa, Tokyo, JP;
Yutaka Mikawa, Tokyo, JP;
Shinichiro Kawabata, Tokyo, JP;
Hideo Namita, Tokyo, JP;
Tae Mochizuki, Tokyo, JP;
Assignee:
MITSUBISHI CHEMICAL CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 7/10 (2006.01); C30B 29/40 (2006.01); C30B 29/38 (2006.01); C30B 25/18 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C30B 29/406 (2013.01); C30B 7/10 (2013.01); C30B 7/105 (2013.01); C30B 25/18 (2013.01); C30B 29/38 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01);
Abstract
A new GaN single crystal is provided. A GaN single crystal according to the present embodiment comprises a gallium polar surface which is a main surface on one side and a nitrogen polar surface which is a main surface on the opposite side,