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For the Inventor, By the Inventor

Tokyo, Japan

Tae Mochizuki

This inventor holds 16 USPTO granted patents and 1 published patent application and 2 EPO patents. Top assignee: Mitsubishi Chemical Corporation. Active years: 2019-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tae Mochizuki. Retrieved from https://idiyas.com/inventor/tae-mochizuki

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 16 

% Patents Active = 93.8

 

Average Co-Inventor Count = 5.6

ph-index = 3

Forward Citations = 17(Granted Patents)


Location History:

  • Ushiku, JP (2019 - 2023)
  • Tokyo, JP (2019 - 2024)

Company Filing History:

goldMedal16 out of 2,426 
 
Mitsubishi Chemical Corporation
 patents

Years Active: 2019-2026

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16 patents (USPTO):Explore Patents
1. 12760446 - n-type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitride semiconductor device production method (2026-10-13),
2. 12351943 - n-Type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitride semiconductor device production method (2025-07-08),
3. 12107129 - Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device (2024-10-01),
4. 11987903 - N-type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitride semiconductor device production method (2024-05-21),
5. 11810782 - Conductive C-plane GaN substrate (2023-11-07),
6. 11664428 - Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device (2023-05-30),
7. 11591715 - GaN single crystal and method for manufacturing GaN single crystal (2023-02-28),
8. 11404268 - Method for growing GaN crystal and c-plane GaN substrate (2022-08-02),
9. 11038024 - Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device (2021-06-15),
10. 11031475 - Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device (2021-06-08),
11. 11001940 - GaN single crystal and method for manufacturing GaN single crystal (2021-05-11),
12. 10903072 - Conductive C-plane GaN substrate (2021-01-26),
13. 10796904 - Conductive C-plane GaN substrate (2020-10-06),
14. 10720326 - Method for growing GaN crystal and C-plane GaN substrate (2020-07-21),
15. 10475887 - Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device (2019-11-12),

Title: The Innovative Mind of Tae Mochizuki

Introduction: Tae Mochizuki is a renowned inventor hailing from Tokyo, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Tae Mochizuki holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: With a career spanning over two decades, Tae Mochizuki has worked with leading tech companies in Japan, spearheading projects that have revolutionized the industry. His dedication to pushing the boundaries of what is possible has earned him recognition as a visionary in the field.

Collaborations: Throughout his career, Tae Mochizuki has collaborated with top researchers, engineers, and scientists both locally and internationally, fostering a culture of innovation and knowledge-sharing that has led to groundbreaking discoveries.

Conclusion: Tae Mochizuki's passion for innovation, coupled with his relentless drive to create a better future through technology, cements his legacy as a pioneering inventor in the global landscape of inventions and patents.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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