Average Co-Inventor Count = 5.65
ph-index = 3
The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.
Company Filing History:
1. Mitsubishi Chemical Corporation (15 from 2,347 patents)
15 patents:
1. 12351943 - n-Type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitride semiconductor device production method
2. 12107129 - Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
3. 11987903 - N-type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitride semiconductor device production method
4. 11810782 - Conductive C-plane GaN substrate
5. 11664428 - Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
6. 11591715 - GaN single crystal and method for manufacturing GaN single crystal
7. 11404268 - Method for growing GaN crystal and c-plane GaN substrate
8. 11038024 - Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
9. 11031475 - Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
10. 11001940 - GaN single crystal and method for manufacturing GaN single crystal
11. 10903072 - Conductive C-plane GaN substrate
12. 10796904 - Conductive C-plane GaN substrate
13. 10720326 - Method for growing GaN crystal and C-plane GaN substrate
14. 10475887 - Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
15. 10301743 - GaN single crystal and method for manufacturing GaN single crystal