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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11987903 B1

PDFFull Text
Date of Patent:
May. 21, 2024

Filed:

Feb. 16, 2021

N-type gan crystal, gan wafer, and gan crystal, gan wafer and nitride semiconductor device production method

Applicant:

Mitsubishi Chemical Corporation, Tokyo, JP;

Inventors:

Kenji Iso, Tokyo, JP;

Tatsuya Takahashi, Tokyo, JP;

Tae Mochizuki, Tokyo, JP;

Yuuki Enatsu, Tokyo, JP;

Assignee:

MITSUBISHI CHEMICAL CORPORATION, Tokyo, JP;

Attorney:

Element IP, PLC

Primary Examiner:

Elizabeth E Mulvaney

Int. Cl.
CPC ...
B32B 3/00 (2006.01); C23C 16/34 (2006.01); C30B 25/20 (2006.01); C30B 29/40 (2006.01); H01L 21/02 (2006.01); H01L 29/04 (2006.01); H01L 29/20 (2006.01); H01L 29/36 (2006.01); H01L 33/00 (2010.01); H01L 33/02 (2010.01); H01L 33/16 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
C30B 29/406 (2013.01); C23C 16/34 (2013.01); C30B 25/20 (2013.01); H01L 21/02389 (2013.01); H01L 21/0254 (2013.01); H01L 21/02576 (2013.01); H01L 29/045 (2013.01); H01L 29/2003 (2013.01); H01L 29/36 (2013.01); H01L 33/0075 (2013.01); H01L 33/025 (2013.01); H01L 33/16 (2013.01); H01L 33/32 (2013.01);
Abstract

Provided is an n-type GaN crystal, in which a donor impurity contained at the highest concentration is Ge, and which has a room-temperature resistivity of lower than 0.03 Ω·cm and a (004) XRD rocking curve FWHM of less than 20 arcsec. The n-type GaN crystal has two main surfaces, each having an area of 2 cmor larger. One of the two main surfaces can have a Ga polarity and can be inclined at an angle of 0° to 10° with respect to a (0001) crystal plane. Further, the n-type GaN crystal can have a diameter of 20 mm or larger.

Find Patent Forward Citations

Iso, Kenji. (2024). N-type gan crystal, gan wafer, and gan crystal, gan wafer and nitride semiconductor device production method (U.S. Patent No. 11987903). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11987903

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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