The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2026
Filed:
Jun. 02, 2025
Mitsubishi Chemical Corporation, Tokyo, JP;
Kenji Iso, Tokyo, JP;
Tatsuya Takahashi, Tokyo, JP;
Tae Mochizuki, Tokyo, JP;
Yuuki Enatsu, Tokyo, JP;
MITSUBISHI CHEMICAL CORPORATION, Tokyo, JP;
Abstract
Provided is an n-type GaN crystal, which has two main surfaces facing opposite directions from each other. One of the two main surfaces has a Ga polarity and is inclined at an angle of 0° to 10° with respect to the (0001) crystal plane. The n-type GaN crystal yields at least one X-ray anomalous transmission image having a square area of 10 mm×10 mm, preferably 15 mm×15 mm, and more preferably 20 mm×20 mm. In addition, the n-type GaN crystal has a Si concentration of 5×10atoms/cmor higher, O concentration of 3×10atoms/cmor lower, and/or a H concentration of 1×10atoms/cmor lower.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile