The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2023
Filed:
Apr. 06, 2021
Mitsubishi Chemical Corporation, Tokyo, JP;
Hideo Fujisawa, Tokyo, JP;
Yutaka Mikawa, Tokyo, JP;
Shinichiro Kawabata, Tokyo, JP;
Hideo Namita, Tokyo, JP;
Tae Mochizuki, Tokyo, JP;
MITSUBISHI CHEMICAL CORPORATION, Tokyo, JP;
Abstract
A GaN single crystal having a gallium polar surface which is a main surface on one side and a nitrogen polar surface which is a main surface on the opposite side, wherein on the gallium polar surface is found at least one square area, an outer periphery of which is constituted by four sides of 2 mm or more in length, and, when the at least one square area is divided into a plurality of sub-areas each of which is a 100 μm×100 μm square, pit-free areas account for 80% or more of the plurality of sub-areas.