The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2026
Filed:
Feb. 23, 2024
Gallium nitride crystal, gallium nitride substrate, and method for producing gallium nitride crystal
Mitsubishi Chemical Corporation, Tokyo, JP;
The Japan Steel Works, Ltd., Tokyo, JP;
MITSUBISHI CHEMICAL CORPORATION, Tokyo, JP;
THE JAPAN STEEL WORKS, LTD., Tokyo, JP;
Abstract
A gallium nitride crystal contains F. A total content of halogen elements other than F in the gallium nitride crystal is 1/100 or less of a content of F. The gallium nitride crystal includes a main surfacehaving an inclination of 0 to 10 degrees from a (000-1) crystal plane. The main surfaceis a specific main surface A satisfying a specific condition regarding facet growth region, in which a first line segment, which is a virtual line segment extending in a first direction on the specific main surface A and having a length of 40 mm, and a second line segment, which is a virtual line segment extending in a second direction perpendicular to the first direction on the specific main surface A and having a length of 40 mm, can be drawn. The gallium nitride crystal has specific crystal defects curbed and is of high quality.