The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2013
Filed:
Aug. 27, 2004
Kazuhiko Matsumoto, Ibaraki, JP;
Atsuhiko Kojima, Ibaraki, JP;
Satoru Nagao, Chiba, JP;
Masanori Katou, Kanagawa, JP;
Yutaka Yamada, Ibaraki, JP;
Kazuhiro Nagaike, Kanagawa, JP;
Yasuo Ifuku, Kanagawa, JP;
Hiroshi Mitani, Kanagawa, JP;
Kazuhiko Matsumoto, Ibaraki, JP;
Atsuhiko Kojima, Ibaraki, JP;
Satoru Nagao, Chiba, JP;
Masanori Katou, Kanagawa, JP;
Yutaka Yamada, Ibaraki, JP;
Kazuhiro Nagaike, Kanagawa, JP;
Yasuo Ifuku, Kanagawa, JP;
Hiroshi Mitani, Kanagawa, JP;
Japan Science and Technology Agency, Saitama, JP;
Abstract
A sensor capable of detecting detection targets that are necessary to be detected with high sensitivity is provided. It comprises a field-effect transistorA having a substrate, a source electrodeand a drain electrodeprovided on said substrate, and a channelforming a current path between said source electrodeand said drain electrode wherein said field-effect transistorA comprises: an interaction-sensing gatefor immobilizing thereon a specific substancethat is capable of selectively interacting with the detection targets; and a gateapplied a voltage thereto so as to detect the interaction by the change of the characteristic of said field-effect transistorA.