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For the Inventor, By the Inventor

Hopewell Junction, NY, United States of America

Sarah Huffsmith Knickerbocker

USPTO Granted Patents = 39 

Average Co-Inventor Count = 5.3

ph-index = 10

Forward Citations = 341(Granted Patents)


Location History:

  • Poughkeepsie, NY (US) (2019)
  • Hopewell Junction, NY (US) (1990 - 2022)

Company Filing History:

goldMedal32 out of 164,108 
 
International Business Machines Corporation
 patents
silverMedal3 out of 927 
 
Globalfoundries U.S. Inc.
 patents
bronzeMedal2 out of 5,671 
 
Globalfoundries Inc.
 patents
4. 1 out of 1 
 
Hitachi Chemicial Dupont Microsystems, L.l.c.
 patent
5. 1 out of 27 
 
Hitachi Chemical Dupont Microsystems, Ltd.
 patents
6. 1 out of 59 
 
Globalfoundries U.S. 2 LLC
 patents
7. 1 out of 1 
 
Tessera Intellectual Properties, Inc.
 patent
where one patent can have more than one assignee

Years Active: 1990-2025

where 'Filed Patents' based on already Granted Patents

39 patents (USPTO):
1. 12474519 - Photonics chip patterning with multiple photoresist layers (2025-11-18),
2. 12334461 - Bonding structure using two oxide layers with different stress levels, and related method (2025-06-17),
3. 11502106 - Multi-layered substrates of semiconductor devices (2022-11-15),
4. 10520679 - Fiber alignment to photonics chip (2019-12-31),
5. 10090255 - Dicing channels for glass interposers (2018-10-02),
6. 9401336 - Dual layer stack for contact formation (2016-07-26),
7. 9362223 - Integrated circuit assembly with cushion polymer layer (2016-06-07),
8. 9209128 - Integrated circuit assembly with cushion polymer layer (2015-12-08),
9. 9171749 - Handler wafer removal facilitated by the addition of an amorphous carbon layer on the handler wafer (2015-10-27),
10. 8807184 - Reduction of edge chipping during wafer handling (2014-08-19),
11. 8753460 - Reduction of edge chipping during wafer handling (2014-06-17),
12. 8668834 - Protecting a mold having a substantially planar surface provided with a plurality of mold cavities (2014-03-11),
13. 7999377 - Method and structure for optimizing yield of 3-D chip manufacture (2011-08-16),
14. 7833897 - Process for making interconnect solder Pb-free bumps free from organo-tin/tin deposits on the wafer surface (2010-11-16),
15. 7767575 - Forming robust solder interconnect structures by reducing effects of seed layer underetching (2010-08-03),

Title: Sarah Huffsmith Knickerbocker: an Innovative Force in Semiconductor Devices

Introduction:

Sarah Huffsmith Knickerbocker, a renowned inventor from Hopewell Junction, NY (US), has made significant contributions to the field of semiconductor devices. With a career spanning several years, she has garnered recognition for her groundbreaking work and has secured an impressive portfolio of 35 patents. This article dives into Knickerbocker's latest patents, highlights her career achievements, explores her collaborations with prominent companies, and concludes with an acknowledgment of her remarkable contributions.

Latest Patents:

One of Knickerbocker's recent patents is the "Multi-layered Substrates of Semiconductor Devices." This invention involves a semiconductor device equipped with a multi-layered substrate featuring an interposed polymeric film and a device layer. This innovative approach enhances the functionality and performance of semiconductor devices.

Another noteworthy patent is the "Dicing Channels for Glass Interposers." This invention focuses on establishing effective dicing channels for singulation purposes in interposers. The structure includes redistribution layers, a glass interposer, and a channel that is filled with polymer material. This invention improves the manufacturing process of semiconductor structures.

Career Highlights:

Throughout her illustrious career, Knickerbocker has consistently pushed the boundaries of semiconductor innovation. Her work has resulted in numerous accolades and contributions to the industry. Her portfolio of 35 patents stands as a testament to her expertise and originality.

Collaborations:

Knickerbocker has collaborated with industry-leading companies, such as IBM (International Business Machines Corporation) and Hitachi Chemical Dupont Microsystems, L.l.c. These collaborations have provided her with invaluable opportunities to work alongside other talented professionals, including notable peers such as Jonathan H. Griffith and Kamalesh K. Srivastava. Through these collaborations, Knickerbocker's innovative ideas have been nurtured, leading to groundbreaking advancements in semiconductor devices.

Conclusion:

Sarah Huffsmith Knickerbocker's pioneering work in the field of semiconductor devices has left an indelible mark on the industry. With an impressive portfolio of patents, her contributions have paved the way for advancements in device performance, manufacturing processes, and overall functionality. Knickerbocker's collaborations with industry giants further solidify her status as an innovative force in the field. Her dedication and expertise continue to inspire future generations of inventors and propel the semiconductor industry into a new era of technological excellence.

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