The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 17, 2025

Filed:

Sep. 06, 2022
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

Jorge A. Lubguban, Danbury, CT (US);

Sarah H. Knickerbocker, Poughkeepsie, NY (US);

Lloyd Burrell, Poughkeepsie, NY (US);

John J. Garant, Poughkeepsie, NY (US);

Matthew C. Gorfien, Saratoga Springs, NY (US);

Assignee:

GLOBALFOUNDRIES U.S. INC., Malta, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/00 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 24/08 (2013.01); H01L 24/05 (2013.01); H01L 24/80 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/80379 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01);
Abstract

A bonding structure for a semiconductor substrate and related method are provided. The bonding structure includes a first oxide layer on the semiconductor substrate, and a second oxide layer on the first oxide layer, the second oxide layer for bonding to another structure. The second oxide layer has a higher stress level than the first oxide layer, and the second oxide layer is thinner than the first oxide layer. The second oxide layer may also have a higher density than the first oxide layer. The bonding structure can be used to bond chips to wafer or wafer to wafer and provides a greater bond strength than just a thick oxide layer.


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